IRLR8103VTRPBF Tech Spezifikatioune
Infineon Technologies - IRLR8103VTRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRLR8103VTRPBF
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D-Pak | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 9mOhm @ 15A, 10V | |
Power Dissipation (Max) | 115W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2672 pF @ 16 V | |
Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 91A (Tc) |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRLR8103VTRPBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRLR8103VTRPBF | IRLR8113TRPBF | IRLR8113TR | IRLR8103VTRRPBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Supplier Device Package | D-Pak | D-Pak | D-Pak | D-Pak |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
Input Capacitance (Ciss) (Max) @ Vds | 2672 pF @ 16 V | 2920 pF @ 15 V | 2920 pF @ 15 V | 2672 pF @ 16 V |
Power Dissipation (Max) | 115W (Tc) | 89W (Tc) | 89W (Tc) | 115W (Tc) |
FET Feature | - | - | - | - |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 91A (Tc) | 94A (Tc) | 94A (Tc) | 91A (Tc) |
Rds On (Max) @ Id, Vgs | 9mOhm @ 15A, 10V | 6mOhm @ 15A, 10V | 6mOhm @ 15A, 10V | 9mOhm @ 15A, 10V |
Vgs (th) (Max) @ Id | 3V @ 250µA | 2.25V @ 250µA | 2.25V @ 250µA | 3V @ 250µA |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 5 V | 32 nC @ 4.5 V | 32 nC @ 4.5 V | 27 nC @ 5 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Eroflueden IRLR8103VTRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRLR8103VTRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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