IRLML9303TRPBF Tech Spezifikatioune
Infineon Technologies - IRLML9303TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRLML9303TRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.4V @ 10µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | Micro3™/SOT-23 | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 165mOhm @ 2.3A, 10V | |
Power Dissipation (Max) | 1.25W (Ta) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 160 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 2 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.3A (Ta) | |
Basis Produktnummer | IRLML9303 |
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Produktiounsattriff | ||||
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Part Number | IRLML9303TRPBF | IRLMS2002 | IRLMS2002TR | IRLMS1503TR |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package protegéieren | Tape & Reel (TR) | Tube | Cut Tape (CT) | Cut Tape (CT) |
Vgs (Max) | ±20V | ±12V | - | - |
Entworf fir Source Voltage (Vdss) | 30 V | 20 V | 20 V | 30 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.3A (Ta) | 6.5A (Ta) | 6.5A (Ta) | 3.2A (Ta) |
FET Feature | - | - | - | - |
Basis Produktnummer | IRLML9303 | IRLMS200 | - | - |
Package / Case | TO-236-3, SC-59, SOT-23-3 | SOT-23-6 | SOT-23-6 | SOT-23-6 |
Vgs (th) (Max) @ Id | 2.4V @ 10µA | 1.2V @ 250µA | 1.2V @ 250µA | 1V @ 250µA |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 2.5V, 4.5V | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 160 pF @ 25 V | 1310 pF @ 15 V | 1310 pF @ 15 V | 210 pF @ 25 V |
Supplier Device Package | Micro3™/SOT-23 | Micro6™(SOT23-6) | Micro6™(SOT23-6) | Micro6™(TSOP-6) |
FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
Serie | HEXFET® | HEXFET® | - | - |
Power Dissipation (Max) | 1.25W (Ta) | 2W (Ta) | - | - |
Gate Charge (Qg) (Max) @ Vgs | 2 nC @ 4.5 V | 22 nC @ 5 V | 22 nC @ 5 V | 9.6 nC @ 10 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | - | - |
Rds On (Max) @ Id, Vgs | 165mOhm @ 2.3A, 10V | 30mOhm @ 6.5A, 4.5V | 30mOhm @ 6.5A, 4.5V | 100mOhm @ 2.2A, 10V |
Eroflueden IRLML9303TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRLML9303TRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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