IRLML0030TRPBF Tech Spezifikatioune
Infineon Technologies - IRLML0030TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRLML0030TRPBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2.3V @ 25µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | Micro3™/SOT-23 | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 5.2A, 10V | |
| Power Dissipation (Max) | 1.3W (Ta) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 382 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 2.6 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.3A (Ta) | |
| Basis Produktnummer | IRLML0030 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRLML0030TRPBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRLML0030TRPBF | IRLML0040TRPBF | IRLML0030TRPBF. | IRLML0060TRPB |
| Hiersteller | Infineon Technologies | Infineon Technologies | IR | Cypress Semiconductor (Infineon Technologies) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
| Vgs (th) (Max) @ Id | 2.3V @ 25µA | 2.5V @ 25µA | - | - |
| FET Typ | N-Channel | N-Channel | - | - |
| Vgs (Max) | ±20V | ±16V | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.3A (Ta) | 3.6A (Ta) | - | - |
| Entworf fir Source Voltage (Vdss) | 30 V | 40 V | - | - |
| Basis Produktnummer | IRLML0030 | IRLML0040 | - | - |
| Supplier Device Package | Micro3™/SOT-23 | Micro3™/SOT-23 | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | Surface Mount | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | - | - |
| Power Dissipation (Max) | 1.3W (Ta) | 1.3W (Ta) | - | - |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 5.2A, 10V | 56mOhm @ 3.6A, 10V | - | - |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | - | - |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 2.6 nC @ 4.5 V | 3.9 nC @ 4.5 V | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 382 pF @ 15 V | 266 pF @ 25 V | - | - |
| Serie | HEXFET® | HEXFET® | - | - |
Eroflueden IRLML0030TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRLML0030TRPBF - Infineon Technologies.
IRLML0030TRPBF.IRIRLML0060TRPBCypress Semiconductor (Infineon Technologies)IRLML0040TRPBFInfineon TechnologiesMOSFET N-CH 40V 3.6A SOT23IRLM6302TRIRIRLM6302TRPBFIRIRLM5203TRPBFIRIRLML0040GTRPBFVBSEMIIRLML0060TRIRIRLM6401TRPBFIRIRLML0030PBF-1IRIRLML0010TRPBFINFIRLML0030TRPBF MOSCypress Semiconductor (Infineon Technologies)IRLML0060GTRPBFVBSEMIIRLM6402TRPBFIRIRLM5103TRPBFIRIRLML0040HAMOSIRLML0030TRPBF-1IRIRLM6401TRIR| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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