IRLL2705TRPBF Tech Spezifikatioune
Infineon Technologies - IRLL2705TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRLL2705TRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2V @ 250µA | |
Vgs (Max) | ±16V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-223 | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 40mOhm @ 3.8A, 10V | |
Power Dissipation (Max) | 1W (Ta) | |
Package / Case | TO-261-4, TO-261AA | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
Entworf fir Source Voltage (Vdss) | 55 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.8A (Ta) | |
Basis Produktnummer | IRLL2705 |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRLL2705TRPBF | IRLL3303TRPBF | IRLL2703TRPBF | IRLL2703PBF |
Hiersteller | Infineon Technologies | International Rectifier | Infineon Technologies | Infineon Technologies |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.8A (Ta) | 4.6A (Ta) | 3.9A (Ta) | 3.9A (Ta) |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Entworf fir Source Voltage (Vdss) | 55 V | 30 V | 30 V | 30 V |
Rds On (Max) @ Id, Vgs | 40mOhm @ 3.8A, 10V | 31mOhm @ 4.6A, 10V | 45mOhm @ 3.9A, 10V | 45mOhm @ 3.9A, 10V |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | 4.5V, 10V | 4V, 10V | 4V, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V | 840 pF @ 25 V | 530 pF @ 25 V | 530 pF @ 25 V |
Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tube |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V | 50 nC @ 10 V | 14 nC @ 5 V | 14 nC @ 5 V |
Basis Produktnummer | IRLL2705 | - | - | - |
Power Dissipation (Max) | 1W (Ta) | 1W (Ta) | 1W (Ta) | 1W (Ta) |
FET Feature | - | - | - | - |
Supplier Device Package | SOT-223 | SOT-223 | SOT-223 | SOT-223 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (th) (Max) @ Id | 2V @ 250µA | 1V @ 250µA | 2.4V @ 250µA | 2.4V @ 250µA |
Vgs (Max) | ±16V | ±16V | ±16V | ±16V |
Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden IRLL2705TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRLL2705TRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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