IRLC3615F Tech Spezifikatioune
Infineon Technologies - IRLC3615F technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRLC3615F
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | - | |
| Vgs (Max) | - | |
| Technologie | - | |
| Supplier Device Package | - | |
| Rds On (Max) @ Id, Vgs | - | |
| Power Dissipation (Max) | - | |
| Package / Case | - | |
| Operatioun Temperatur | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Mounting Type | - | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| FET Typ | - | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | - | |
| Entworf fir Source Voltage (Vdss) | - | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRLC3615F.
| Produktiounsattriff |  |
 |
|
 |
|---|---|---|---|---|
| Part Number | IRLC3615F | IRLD120PBF | IRLD110 | IRLBA1304 |
| Hiersteller | Infineon Technologies | Vishay Siliconix | Vishay Siliconix | Infineon Technologies |
| Vgs (th) (Max) @ Id | - | 2V @ 250µA | 2V @ 250µA | 1V @ 250µA |
| Vgs (Max) | - | ±10V | ±10V | ±16V |
| Rds On (Max) @ Id, Vgs | - | 270mOhm @ 780mA, 5V | 540mOhm @ 600mA, 5V | 4mOhm @ 110A, 10V |
| Operatioun Temperatur | - | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Fuert Volt (Max Rds On, Min Rds On) | - | 4V, 5V | 4V, 5V | 4.5V, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - | 490 pF @ 25 V | 250 pF @ 25 V | 7660 pF @ 25 V |
| FET Typ | - | N-Channel | N-Channel | N-Channel |
| Supplier Device Package | - | 4-HVMDIP | 4-HVMDIP | SUPER-220™ (TO-273AA) |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | - | 1.3W (Ta) | 1.3W (Ta) | 300W (Tc) |
| Mounting Type | - | Through Hole | Through Hole | Through Hole |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | - | 1.3A (Ta) | 1A (Ta) | 185A (Tc) |
| Entworf fir Source Voltage (Vdss) | - | 100 V | 100 V | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | - | 12 nC @ 5 V | 6.1 nC @ 5 V | 140 nC @ 4.5 V |
| Technologie | - | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package / Case | - | 4-DIP (0.300", 7.62mm) | 4-DIP (0.300", 7.62mm) | TO-273AA |
IRLD120PBFVishay SiliconixMOSFET N-CH 100V 1.3A 4DIPIRLBA3803PPBFIRIRLH5030TRPBF MOSCypress Semiconductor (Infineon Technologies)IRLD110Vishay SiliconixMOSFET N-CH 100V 1A 4DIPIRLB8743IRIRLBD59N04EIRIRLBA1304Infineon TechnologiesMOSFET N-CH 40V 185A SUPER-220
IRLB8743PBFInfineon TechnologiesMOSFET N-CH 30V 78A TO220ABIRLBA3803PInfineon TechnologiesMOSFET N-CH 30V 179A SUPER-220IRLD120Vishay SiliconixMOSFET N-CH 100V 1.3A 4DIPIRLH5030TRPBFInfineon TechnologiesMOSFET N-CH 100V 13A/100A 8PQFNIRLD110PBFVishay SiliconixMOSFET N-CH 100V 1A 4DIPIRLBD59N04E MOSIRIRLD014PBFVishay SiliconixMOSFET N-CH 60V 1.7A 4DIPIRLD024Vishay SiliconixMOSFET N-CH 60V 2.5A 4DIPIRLD024PBFVishay SiliconixMOSFET N-CH 60V 2.5A 4DIPIRLB8748PBFInfineon TechnologiesMOSFET N-CH 30V 92A TO220ABIRLB8748IR| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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