IRL8113SPBF Tech Spezifikatioune
Infineon Technologies - IRL8113SPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRL8113SPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.25V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 6mOhm @ 21A, 10V | |
Power Dissipation (Max) | 110W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 105A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRL8113SPBF.
Produktiounsattriff | ||||
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Part Number | IRL8113SPBF | IRL7833STRLPBF | IRLB3034PBF | IRL8113 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V | 47 nC @ 4.5 V | 162 nC @ 4.5 V | 35 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 15 V | 4170 pF @ 15 V | 10315 pF @ 25 V | 2840 pF @ 15 V |
Power Dissipation (Max) | 110W (Tc) | 140W (Tc) | 375W (Tc) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 6mOhm @ 21A, 10V | 3.8mOhm @ 38A, 10V | 1.7mOhm @ 195A, 10V | 6mOhm @ 21A, 10V |
Package protegéieren | Tube | Tape & Reel (TR) | Tube | Tube |
Mounting Type | Surface Mount | Surface Mount | Through Hole | Through Hole |
FET Feature | - | - | - | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 105A (Tc) | 150A (Tc) | 195A (Tc) | 105A (Tc) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 | TO-220-3 |
Vgs (th) (Max) @ Id | 2.25V @ 250µA | 2.3V @ 250µA | 2.5V @ 250µA | 2.25V @ 250µA |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 40 V | 30 V |
Supplier Device Package | D2PAK | D2PAK | TO-220AB | TO-220AB |
Eroflueden IRL8113SPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRL8113SPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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