IRL530NSTRL Tech Spezifikatioune
Infineon Technologies - IRL530NSTRL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRL530NSTRL
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 100mOhm @ 9A, 10V | |
Power Dissipation (Max) | 3.8W (Ta), 79W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRL530NSTRL.
Produktiounsattriff | ||||
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Part Number | IRL530NSTRL | IRL530S | IRL530STRRPBF | IRL530PBF |
Hiersteller | Infineon Technologies | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Supplier Device Package | D2PAK | D²PAK (TO-263) | D²PAK (TO-263) | TO-220AB |
Vgs (Max) | ±20V | ±10V | ±10V | ±10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V | 930 pF @ 25 V | 930 pF @ 25 V | 930 pF @ 25 V |
Serie | HEXFET® | - | - | - |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 5 V | 28 nC @ 5 V | 28 nC @ 5 V | 28 nC @ 5 V |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 |
Rds On (Max) @ Id, Vgs | 100mOhm @ 9A, 10V | 160mOhm @ 9A, 5V | 160mOhm @ 9A, 5V | 160mOhm @ 9A, 5V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | 15A (Tc) | 15A (Tc) | 15A (Tc) |
FET Feature | - | - | - | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through Hole |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Tube |
Vgs (th) (Max) @ Id | 2V @ 250µA | 2V @ 250µA | 2V @ 250µA | 2V @ 250µA |
Power Dissipation (Max) | 3.8W (Ta), 79W (Tc) | 3.7W (Ta), 88W (Tc) | 3.7W (Ta), 88W (Tc) | 88W (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | 4V, 5V | 4V, 5V | 4V, 5V |
Eroflueden IRL530NSTRL PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRL530NSTRL - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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