IRL520NS Tech Spezifikatioune
Infineon Technologies - IRL520NS technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRL520NS
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2V @ 250µA | |
Vgs (Max) | ±16V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 180mOhm @ 6A, 10V | |
Power Dissipation (Max) | 3.8W (Ta), 48W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRL520NS.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRL520NS | IRL520LPBF | IRL520NSTRLPBF | IRL520PBF |
Hiersteller | Infineon Technologies | Vishay Siliconix | Infineon Technologies | Vishay Siliconix |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | 4V, 5V | 4V, 10V | 4V, 5V |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
Serie | HEXFET® | - | HEXFET® | - |
Rds On (Max) @ Id, Vgs | 180mOhm @ 6A, 10V | 270mOhm @ 5.5A, 5V | 180mOhm @ 6A, 10V | 270mOhm @ 5.5A, 5V |
Mounting Type | Surface Mount | Through Hole | Surface Mount | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V | 490 pF @ 25 V | 440 pF @ 25 V | 490 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V | 12 nC @ 5 V | 20 nC @ 5 V | 12 nC @ 5 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Tc) | 9.2A (Tc) | 10A (Tc) | 9.2A (Tc) |
Vgs (Max) | ±16V | ±10V | ±16V | ±10V |
Power Dissipation (Max) | 3.8W (Ta), 48W (Tc) | 60W (Tc) | 3.8W (Ta), 48W (Tc) | 60W (Tc) |
Supplier Device Package | D2PAK | TO-262-3 | D2PAK | TO-220AB |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Package protegéieren | Tube | Tube | Tape & Reel (TR) | Tube |
Vgs (th) (Max) @ Id | 2V @ 250µA | 2V @ 250µA | 2V @ 250µA | 2V @ 250µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Eroflueden IRL520NS PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRL520NS - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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