IRL3303PBF Tech Spezifikatioune
Infineon Technologies - IRL3303PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRL3303PBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Vgs (Max) | ±16V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220AB | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 26mOhm @ 20A, 10V | |
Power Dissipation (Max) | 68W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 38A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRL3303PBF.
Produktiounsattriff | ||||
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Part Number | IRL3303PBF | IRL3302PBF | IRL3303LPBF | IRL3303STRLPBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Rds On (Max) @ Id, Vgs | 26mOhm @ 20A, 10V | 20mOhm @ 23A, 7V | 26mOhm @ 20A, 10V | 26mOhm @ 20A, 10V |
Vgs (Max) | ±16V | ±10V | ±16V | ±16V |
Supplier Device Package | TO-220AB | TO-220AB | TO-262 | D2PAK |
Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V | 31 nC @ 4.5 V | 26 nC @ 4.5 V | 26 nC @ 4.5 V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 7V | 4.5V, 10V | 4.5V, 10V |
Entworf fir Source Voltage (Vdss) | 30 V | 20 V | 30 V | 30 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 38A (Tc) | 39A (Tc) | 38A (Tc) | 38A (Tc) |
Package / Case | TO-220-3 | TO-220-3 | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | 1V @ 250µA | 700mV @ 250µA (Min) | 1V @ 250µA | 1V @ 250µA |
Package protegéieren | Tube | Tube | Tube | Tape & Reel (TR) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V | 1300 pF @ 15 V | 870 pF @ 25 V | 870 pF @ 25 V |
Power Dissipation (Max) | 68W (Tc) | 57W (Tc) | 3.8W (Ta), 68W (Tc) | 3.8W (Ta), 68W (Tc) |
Mounting Type | Through Hole | Through Hole | Through Hole | Surface Mount |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Eroflueden IRL3303PBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRL3303PBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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