IRL3103D1S Tech Spezifikatioune
Infineon Technologies - IRL3103D1S technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRL3103D1S
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Vgs (Max) | ±16V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK | |
Serie | FETKY™ | |
Rds On (Max) @ Id, Vgs | 14mOhm @ 34A, 10V | |
Power Dissipation (Max) | 3.1W (Ta), 89W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 64A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRL3103D1S.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRL3103D1S | IRL3103PBF | IRL3103D1STRL | IRL3103L |
Hiersteller | Infineon Technologies | International Rectifier | Infineon Technologies | Infineon Technologies |
Power Dissipation (Max) | 3.1W (Ta), 89W (Tc) | 94W (Tc) | 3.1W (Ta), 89W (Tc) | 94W (Tc) |
FET Feature | - | - | - | - |
Mounting Type | Surface Mount | Through Hole | Surface Mount | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V | 1650 pF @ 25 V | 1900 pF @ 25 V | 1650 pF @ 25 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Tube | Bulk | Tape & Reel (TR) | Tube |
Serie | FETKY™ | HEXFET® | FETKY™ | HEXFET® |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Supplier Device Package | D2PAK | TO-220AB | D2PAK | TO-262 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 64A (Tc) | 64A (Tc) | 64A (Tc) | 64A (Tc) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-262-3 Long Leads, I²Pak, TO-262AA |
Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 4.5 V | 33 nC @ 4.5 V | 43 nC @ 4.5 V | 33 nC @ 4.5 V |
Vgs (Max) | ±16V | ±16V | ±16V | ±16V |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
Vgs (th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA |
Rds On (Max) @ Id, Vgs | 14mOhm @ 34A, 10V | 12mOhm @ 34A, 10V | 14mOhm @ 34A, 10V | 12mOhm @ 34A, 10V |
Eroflueden IRL3103D1S PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRL3103D1S - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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