IRL1004STRRPBF Tech Spezifikatioune
Infineon Technologies - IRL1004STRRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRL1004STRRPBF
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Vgs (Max) | ±16V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 6.5mOhm @ 78A, 10V | |
Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 5330 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 130A (Tc) | |
Basis Produktnummer | IRL1004 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRL1004STRRPBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRL1004STRRPBF | IRL1104LPBF | IRL1104S | IRL1004SPBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) | 2.4W (Ta), 167W (Tc) | 2.4W (Ta), 167W (Tc) | 3.8W (Ta), 200W (Tc) |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 5330 pF @ 25 V | 3445 pF @ 25 V | 3445 pF @ 25 V | 5330 pF @ 25 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 4.5 V | 68 nC @ 4.5 V | 68 nC @ 4.5 V | 100 nC @ 4.5 V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Entworf fir Source Voltage (Vdss) | 40 V | 40 V | 40 V | 40 V |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Rds On (Max) @ Id, Vgs | 6.5mOhm @ 78A, 10V | 8mOhm @ 62A, 10V | 8mOhm @ 62A, 10V | 6.5mOhm @ 78A, 10V |
Mounting Type | Surface Mount | Through Hole | Surface Mount | Surface Mount |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Supplier Device Package | D2PAK | TO-262 | D2PAK | D2PAK |
Vgs (th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA |
Vgs (Max) | ±16V | ±16V | ±16V | ±16V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 130A (Tc) | 104A (Tc) | 104A (Tc) | 130A (Tc) |
Package protegéieren | Tape & Reel (TR) | Tube | Tube | Tube |
Basis Produktnummer | IRL1004 | - | - | IRL1004 |
Eroflueden IRL1004STRRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRL1004STRRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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