IRFZ24NSTRLPBF Tech Spezifikatioune
Infineon Technologies - IRFZ24NSTRLPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFZ24NSTRLPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 70mOhm @ 10A, 10V | |
Power Dissipation (Max) | 3.8W (Ta), 45W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 55 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFZ24NSTRLPBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFZ24NSTRLPBF | IRFZ24S | IRFZ24NPBF | IRFZ24STRL |
Hiersteller | Infineon Technologies | Vishay Siliconix | Infineon Technologies | Vishay Siliconix |
Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 25 V | 640 pF @ 25 V | 370 pF @ 25 V | 640 pF @ 25 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
FET Feature | - | - | - | - |
Package protegéieren | Tape & Reel (TR) | Tube | Tube | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 70mOhm @ 10A, 10V | 100mOhm @ 10A, 10V | 70mOhm @ 10A, 10V | 100mOhm @ 10A, 10V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | 17A (Tc) | 17A (Tc) | 17A (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 55 V | 60 V | 55 V | 60 V |
Serie | HEXFET® | - | HEXFET® | - |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type | Surface Mount | Surface Mount | Through Hole | Surface Mount |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Supplier Device Package | D2PAK | D²PAK (TO-263) | TO-220AB | D²PAK (TO-263) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | 25 nC @ 10 V | 20 nC @ 10 V | 25 nC @ 10 V |
Power Dissipation (Max) | 3.8W (Ta), 45W (Tc) | 3.7W (Ta), 60W (Tc) | 45W (Tc) | 3.7W (Ta), 60W (Tc) |
Eroflueden IRFZ24NSTRLPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFZ24NSTRLPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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