IRFU4105Z Tech Spezifikatioune
Infineon Technologies - IRFU4105Z technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFU4105Z
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | IPAK (TO-251AA) | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 24.5mOhm @ 18A, 10V | |
| Power Dissipation (Max) | 48W (Tc) | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 55 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30A (Tc) |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | RoHS net konform |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFU4105Z.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRFU4105Z | IRFU420 | IRFU4104PBF | IRFU3910PBF |
| Hiersteller | Infineon Technologies | Vishay Siliconix | Infineon Technologies | Infineon Technologies |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Serie | HEXFET® | - | HEXFET® | HEXFET® |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V | 19 nC @ 10 V | 89 nC @ 10 V | 44 nC @ 10 V |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Rds On (Max) @ Id, Vgs | 24.5mOhm @ 18A, 10V | 3Ohm @ 1.4A, 10V | 5.5mOhm @ 42A, 10V | 115mOhm @ 10A, 10V |
| Supplier Device Package | IPAK (TO-251AA) | TO-251AA | IPAK (TO-251AA) | IPAK (TO-251AA) |
| Entworf fir Source Voltage (Vdss) | 55 V | 500 V | 40 V | 100 V |
| FET Feature | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 25 V | 360 pF @ 25 V | 2950 pF @ 25 V | 640 pF @ 25 V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30A (Tc) | 2.4A (Tc) | 42A (Tc) | 16A (Tc) |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Power Dissipation (Max) | 48W (Tc) | 2.5W (Ta), 42W (Tc) | 140W (Tc) | 79W (Tc) |
Eroflueden IRFU4105Z PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFU4105Z - Infineon Technologies.
IRFU4104IRIRFU420BFCSIRFU420AIRIRFU4104TRL-701 MOSIRIRFU420Vishay SiliconixMOSFET N-CH 500V 2.4A TO251AA
IRFU420B MOSFairchild (onsemi)IRFU4104PBFInfineon TechnologiesMOSFET N-CH 40V 42A IPAKIRFU4105 MOSIRIRFU3910PBFInfineon TechnologiesMOSFET N-CH 100V 16A IPAKIRFU420PBFVishay SiliconixMOSFET N-CH 500V 2.4A TO251AAIRFU4105PBFInfineon TechnologiesMOSFET N-CH 55V 27A IPAKIRFU4105Infineon TechnologiesMOSFET N-CH 55V 27A IPAKIRFU410AFairchild (onsemi)IRFU3911IRIRFU4104-701TRPIRIRFU420BTUFSCIRFU420Harris CorporationMOSFET N-CH 500V 2.4A TO251AAIRFU420APBFVishay SiliconixMOSFET N-CH 500V 3.3A TO251AA| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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