IRFU1010ZPBF Tech Spezifikatioune
International Rectifier - IRFU1010ZPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - IRFU1010ZPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 100µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | IPAK (TO-251AA) | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 7.5mOhm @ 42A, 10V | |
Power Dissipation (Max) | 140W (Tc) | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 55 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 42A (Tc) |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | |
Erreecht Status | |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier IRFU1010ZPBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFU1010ZPBF | IRFU024NPBF | IRFU110PBF | IRFU1205 |
Hiersteller | International Rectifier | Infineon Technologies | Vishay Siliconix | Infineon Technologies |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 55 V | 55 V | 100 V | 55 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 25 V | 370 pF @ 25 V | 180 pF @ 25 V | 1300 pF @ 25 V |
Vgs (th) (Max) @ Id | 4V @ 100µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 42A (Tc) | 17A (Tc) | 4.3A (Tc) | 44A (Tc) |
Serie | HEXFET® | HEXFET® | - | HEXFET® |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Power Dissipation (Max) | 140W (Tc) | 45W (Tc) | 25W (Tc) | 107W (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V | 20 nC @ 10 V | 8.3 nC @ 10 V | 65 nC @ 10 V |
Supplier Device Package | IPAK (TO-251AA) | IPAK (TO-251AA) | TO-251AA | IPAK (TO-251AA) |
Package protegéieren | Tube | Tube | Tube | Tube |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 7.5mOhm @ 42A, 10V | 75mOhm @ 10A, 10V | 540mOhm @ 900mA, 10V | 27mOhm @ 26A, 10V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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