IRFSL4020PBF Tech Spezifikatioune
Infineon Technologies - IRFSL4020PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFSL4020PBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4.9V @ 100µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-262 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 11A, 10V | |
| Power Dissipation (Max) | 100W (Tc) | |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 50 V | |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 200 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFSL4020PBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRFSL4020PBF | IRFSL3607PBF | IRFSL4127PBF | IRFSL4229PBF |
| Hiersteller | Infineon Technologies | International Rectifier | Infineon Technologies | Infineon Technologies |
| Supplier Device Package | TO-262 | TO-262 | TO-262 | TO-262 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Serie | - | HEXFET® | HEXFET® | HEXFET® |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -40°C ~ 175°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 200 V | 75 V | 200 V | 250 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) | 80A (Tc) | 72A (Tc) | 45A (Tc) |
| Package protegéieren | Tube | Bulk | Tube | Tube |
| Power Dissipation (Max) | 100W (Tc) | 140W (Tc) | 375W (Tc) | 330W (Tc) |
| FET Feature | - | - | - | - |
| Vgs (th) (Max) @ Id | 4.9V @ 100µA | 4V @ 100µA | 5V @ 250µA | 5V @ 250µA |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V | 84 nC @ 10 V | 150 nC @ 10 V | 110 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | - | ±30V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 11A, 10V | 9mOhm @ 46A, 10V | 22mOhm @ 44A, 10V | 48mOhm @ 26A, 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | - | 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 50 V | 3070 pF @ 50 V | 5380 pF @ 50 V | 4560 pF @ 25 V |
Eroflueden IRFSL4020PBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFSL4020PBF - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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