IRFS7530PBF Tech Spezifikatioune
Infineon Technologies - IRFS7530PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFS7530PBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3.7V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK | |
Serie | HEXFET®, StrongIRFET™ | |
Rds On (Max) @ Id, Vgs | 2mOhm @ 100A, 10V | |
Power Dissipation (Max) | 375W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 13703 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 411 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 195A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFS7530PBF.
Produktiounsattriff | ||||
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Part Number | IRFS7530PBF | IRFS7530TRL7PP | IRFS7530TRLPBF | IRFS7440PBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Input Capacitance (Ciss) (Max) @ Vds | 13703 pF @ 25 V | 12960 pF @ 25 V | 13703 pF @ 25 V | 4730 pF @ 25 V |
Supplier Device Package | D2PAK | PG-TO263-7 | PG-TO263-2 | TO-263 (D²Pak) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 3.7V @ 250µA | 3.7V @ 250µA | 3.7V @ 250µA | 3.9V @ 100µA |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V | 6V, 10V | 6V, 10V |
Power Dissipation (Max) | 375W (Tc) | 375W (Tc) | 375W (Tc) | 208W (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 195A (Tc) | 240A (Tc) | 195A (Tc) | 120A (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 411 nC @ 10 V | 354 nC @ 10 V | 411 nC @ 10 V | 135 nC @ 10 V |
Package protegéieren | Tube | Tape & Reel (TR) | Tape & Reel (TR) | Tube |
FET Feature | - | - | - | - |
Serie | HEXFET®, StrongIRFET™ | HEXFET®, StrongIRFET™ | HEXFET®, StrongIRFET™ | HEXFET®, StrongIRFET™ |
Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 60 V | 40 V |
Rds On (Max) @ Id, Vgs | 2mOhm @ 100A, 10V | 1.4mOhm @ 100A, 10V | 2mOhm @ 100A, 10V | 2.5mOhm @ 100A, 10V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Eroflueden IRFS7530PBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFS7530PBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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