IRFS59N10DPBF Tech Spezifikatioune
International Rectifier - IRFS59N10DPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - IRFS59N10DPBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 5.5V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | D2PAK | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 35.4A, 10V | |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 2450 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 59A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier IRFS59N10DPBF.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | IRFS59N10DPBF | IRFS5620PBF | IRFS5620TRLPBF | IRFS630B |
| Hiersteller | International Rectifier | Infineon Technologies | Infineon Technologies | Fairchild Semiconductor |
| Vgs (Max) | ±30V | ±20V | ±20V | - |
| Package protegéieren | Bulk | Tube | Tape & Reel (TR) | Bulk |
| Entworf fir Source Voltage (Vdss) | 100 V | 200 V | 200 V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2450 pF @ 25 V | 1710 pF @ 50 V | 1710 pF @ 50 V | - |
| Serie | HEXFET® | - | - | * |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V | 38 nC @ 10 V | 38 nC @ 10 V | - |
| Supplier Device Package | D2PAK | D2PAK | D2PAK | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | - |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 35.4A, 10V | 77.5mOhm @ 15A, 10V | 77.5mOhm @ 15A, 10V | - |
| FET Typ | N-Channel | N-Channel | N-Channel | - |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | - |
| Vgs (th) (Max) @ Id | 5.5V @ 250µA | 5V @ 100µA | 5V @ 100µA | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 59A (Tc) | 24A (Tc) | 24A (Tc) | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) | 144W (Tc) | 144W (Tc) | - |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - |
| FET Feature | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
IRFS630Fairchild (onsemi)IRFS5620IRIRFS5620PBFInfineon TechnologiesMOSFET N-CH 200V 24A D2PAKIRFS5615IRIRFS59N10DIRIRFS59N10DPBF MOSIRIRFS59N10DTRRIRIRFS5615TRPBFVBSEMIIRFS5620TRLPBFInfineon TechnologiesMOSFET N-CH 200V 24A D2PAKIRFS59N10DTRLIRIRFS59N10DTRRPBFIRIRFS630BFairchild Semiconductor9A, 200V, 0.4OHM, N-CHANNEL MOSFIRFS59N10D MOSIRIRFS630AFairchild SemiconductorN-CHANNEL POWER MOSFETIRFS5615PBFInfineon TechnologiesMOSFET N-CH 150V 33A D2PAK
IRFS59N10DTRLPInternational RectifierMOSFET N-CH 100V 59A TO263-3-2IRFS610BFairchild (onsemi)IRFS5615TRLPBFInternational RectifierIRFS5615 - DIGITAL AUDIO MOSFET| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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