IRFS33N15DTRLP Tech Spezifikatioune
Infineon Technologies - IRFS33N15DTRLP technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFS33N15DTRLP
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 5.5V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | D2PAK | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 20A, 10V | |
| Power Dissipation (Max) | 3.8W (Ta), 170W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 2020 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 150 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 33A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFS33N15DTRLP.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRFS33N15DTRLP | IRFS3307ZTRRPBF | IRFS33N15D | IRFS3307ZTRLPBF |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 20A, 10V | 5.8mOhm @ 75A, 10V | 56mOhm @ 20A, 10V | 5.8mOhm @ 75A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2020 pF @ 25 V | 4750 pF @ 50 V | 2020 pF @ 25 V | 4750 pF @ 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V | 110 nC @ 10 V | 90 nC @ 10 V | 110 nC @ 10 V |
| Entworf fir Source Voltage (Vdss) | 150 V | 75 V | 150 V | 75 V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Vgs (th) (Max) @ Id | 5.5V @ 250µA | 4V @ 150µA | 5.5V @ 250µA | 4V @ 150µA |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 33A (Tc) | 120A (Tc) | 33A (Tc) | 120A (Tc) |
| Supplier Device Package | D2PAK | D²PAK (TO-263) | D2PAK | D2PAK |
| FET Feature | - | - | - | - |
| Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
| Power Dissipation (Max) | 3.8W (Ta), 170W (Tc) | 230W (Tc) | 3.8W (Ta), 170W (Tc) | 230W (Tc) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V | ±20V | ±30V | ±20V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Eroflueden IRFS33N15DTRLP PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFS33N15DTRLP - Infineon Technologies.
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IRFS350AonsemiMOSFET N-CH 400V 11.5A TO3PFIRFS350AFairchild SemiconductorMOSFET N-CH 400V 11.5A TO3PFIRFS3307ZPBFInfineon TechnologiesMOSFET N-CH 75V 120A D2PAK| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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