IRFS3004PBF Tech Spezifikatioune
Infineon Technologies - IRFS3004PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFS3004PBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | D2PAK | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 1.75mOhm @ 195A, 10V | |
| Power Dissipation (Max) | 380W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 9200 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 40 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 195A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFS3004PBF.
| Produktiounsattriff |  |
|
 |
 |
|---|---|---|---|---|
| Part Number | IRFS3004PBF | IRFS3004TRLPBF | IRFS250B | IRFS3004-7PPBF |
| Hiersteller | Infineon Technologies | Infineon Technologies | Fairchild Semiconductor | Infineon Technologies |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 195A (Ta) | 195A (Ta) | 21.3A (Tc) | 240A (Tc) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Input Capacitance (Ciss) (Max) @ Vds | 9200 pF @ 25 V | 9200 pF @ 25 V | 3400 pF @ 25 V | 9130 pF @ 25 V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Vgs (Max) | ±20V | ±20V | ±30V | ±20V |
| Power Dissipation (Max) | 380W (Tc) | 380W (Tc) | 90W (Tc) | 380W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V | 240 nC @ 10 V | 123 nC @ 10 V | 240 nC @ 10 V |
| Supplier Device Package | D2PAK | D2PAK | TO-3PF | D2PAK (7-Lead) |
| Entworf fir Source Voltage (Vdss) | 40 V | 40 V | 200 V | 40 V |
| Serie | HEXFET® | HEXFET® | - | HEXFET® |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3P-3 Full Pack | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Package protegéieren | Tube | Tape & Reel (TR) | Bulk | Tube |
| FET Feature | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 1.75mOhm @ 195A, 10V | 1.75mOhm @ 195A, 10V | 85mOhm @ 10.65A, 10V | 1.25mOhm @ 195A, 10V |
| Mounting Type | Surface Mount | Surface Mount | Through Hole | Surface Mount |
Eroflueden IRFS3004PBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFS3004PBF - Infineon Technologies.
IRFS3004TRLPBFInfineon TechnologiesMOSFET N-CH 40V 195A D2PAK
IRFS3004IR
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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