IRFR7540TRPBF Tech Spezifikatioune
Infineon Technologies - IRFR7540TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFR7540TRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3.7V @ 100µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D-PAK (TO-252AA) | |
Serie | StrongIRFET™ | |
Rds On (Max) @ Id, Vgs | 4.8mOhm @ 66A, 10V | |
Power Dissipation (Max) | 140W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 4360 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 90A (Tc) | |
Basis Produktnummer | IRFR7540 |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFR7540TRPBF | IRFR7446PBF | IRFR7546TRPBF | IRFR7540PBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | International Rectifier |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 90A (Tc) | 56A (Tc) | 56A (Tc) | 90A (Tc) |
Basis Produktnummer | IRFR7540 | - | IRFR7546 | - |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Rds On (Max) @ Id, Vgs | 4.8mOhm @ 66A, 10V | 3.9mOhm @ 56A, 10V | 7.9mOhm @ 43A, 10V | 4.8mOhm @ 66A, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package protegéieren | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Tube |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Vgs (th) (Max) @ Id | 3.7V @ 100µA | 3.9V @ 100µA | 3.7V @ 100µA | 3.7V @ 100µA |
Power Dissipation (Max) | 140W (Tc) | 98W (Tc) | 99W (Tc) | 140W (Tc) |
Entworf fir Source Voltage (Vdss) | 60 V | 40 V | 60 V | 60 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V | 130 nC @ 10 V | 87 nC @ 10 V | 130 nC @ 10 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 4360 pF @ 25 V | 3150 pF @ 25 V | 3020 pF @ 25 V | 4360 pF @ 25 V |
FET Feature | - | - | - | - |
Serie | StrongIRFET™ | HEXFET®, StrongIRFET™ | StrongIRFET™ | HEXFET® |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V | 6V, 10V | - |
Supplier Device Package | D-PAK (TO-252AA) | TO-252, (D-Pak) | DPAK | TO-252AA |
Eroflueden IRFR7540TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFR7540TRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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