IRFR4105TR Tech Spezifikatioune
Infineon Technologies - IRFR4105TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFR4105TR
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D-Pak | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 45mOhm @ 16A, 10V | |
Power Dissipation (Max) | 68W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 55 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 27A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFR4105TR.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFR4105TR | IRFR4104TRLPBF | IRFR420 | IRFR4104TRPBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Harris Corporation | Infineon Technologies |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 27A (Tc) | 42A (Tc) | 2.4A (Tc) | 42A (Tc) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
Supplier Device Package | D-Pak | D-Pak | D-Pak | D-Pak |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V | 2950 pF @ 25 V | 360 pF @ 25 V | 2950 pF @ 25 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Serie | HEXFET® | HEXFET® | - | HEXFET® |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Rds On (Max) @ Id, Vgs | 45mOhm @ 16A, 10V | 5.5mOhm @ 42A, 10V | 3Ohm @ 1.4A, 10V | 5.5mOhm @ 42A, 10V |
FET Feature | - | - | - | - |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 55 V | 40 V | 500 V | 40 V |
Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V | 89 nC @ 10 V | 19 nC @ 10 V | 89 nC @ 10 V |
Power Dissipation (Max) | 68W (Tc) | 140W (Tc) | 2.5W (Ta), 42W (Tc) | 140W (Tc) |
Eroflueden IRFR4105TR PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFR4105TR - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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