IRFR3706TRLPBF Tech Spezifikatioune
Infineon Technologies - IRFR3706TRLPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFR3706TRLPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2V @ 250µA | |
Vgs (Max) | ±12V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D-Pak | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 9mOhm @ 15A, 10V | |
Power Dissipation (Max) | 88W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 2.8V, 10V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFR3706TRLPBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFR3706TRLPBF | IRFR3707Z | IRFR3704ZTRLPBF | IRFR3707 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Power Dissipation (Max) | 88W (Tc) | 50W (Tc) | 48W (Tc) | 87W (Tc) |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Tc) | 56A (Tc) | 60A (Tc) | 61A (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V | 14 nC @ 4.5 V | 14 nC @ 4.5 V | 19 nC @ 4.5 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Vgs (th) (Max) @ Id | 2V @ 250µA | 2.25V @ 250µA | 2.55V @ 250µA | 3V @ 250µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±12V | ±20V | ±20V | ±20V |
Fuert Volt (Max Rds On, Min Rds On) | 2.8V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | D-Pak | D-Pak | D-Pak | D-Pak |
Package protegéieren | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Tube |
Entworf fir Source Voltage (Vdss) | 20 V | 30 V | 20 V | 30 V |
Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 10 V | 1150 pF @ 15 V | 1190 pF @ 10 V | 1990 pF @ 15 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 9mOhm @ 15A, 10V | 9.5mOhm @ 15A, 10V | 8.4mOhm @ 15A, 10V | 13mOhm @ 15A, 10V |
Eroflueden IRFR3706TRLPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFR3706TRLPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.