IRFR3518PBF Tech Spezifikatioune
Infineon Technologies - IRFR3518PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFR3518PBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D-Pak | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 29mOhm @ 18A, 10V | |
Power Dissipation (Max) | 110W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 80 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 38A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFR3518PBF.
Produktiounsattriff | ||||
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Part Number | IRFR3518PBF | IRFR3505TRPBF | IRFR3518TRPBF | IRFR3704 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 3V @ 250µA |
Rds On (Max) @ Id, Vgs | 29mOhm @ 18A, 10V | 13mOhm @ 30A, 10V | 29mOhm @ 18A, 10V | 9.5mOhm @ 15A, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 38A (Tc) | 30A (Tc) | 38A (Tc) | 75A (Tc) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
FET Feature | - | - | - | - |
Supplier Device Package | D-Pak | D-Pak | D-Pak | D-Pak |
Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V | 93 nC @ 10 V | 56 nC @ 10 V | 19 nC @ 4.5 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Entworf fir Source Voltage (Vdss) | 80 V | 55 V | 80 V | 20 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Tube | Tape & Reel (TR) | Tape & Reel (TR) | Tube |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Power Dissipation (Max) | 110W (Tc) | 140W (Tc) | 110W (Tc) | 90W (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 25 V | 2030 pF @ 25 V | 1710 pF @ 25 V | 1996 pF @ 10 V |
Eroflueden IRFR3518PBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFR3518PBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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