IRFR15N20DPBF Tech Spezifikatioune
International Rectifier - IRFR15N20DPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - IRFR15N20DPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 5.5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D-Pak | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 165mOhm @ 10A, 10V | |
Power Dissipation (Max) | 3W (Ta), 140W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 910 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 200 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier IRFR15N20DPBF.
Produktiounsattriff | ||||
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Part Number | IRFR15N20DPBF | IRFR18N15DTRLP | IRFR13N20DTRLP | IRFR13N20DTR |
Hiersteller | International Rectifier | International Rectifier | Infineon Technologies | Infineon Technologies |
Supplier Device Package | D-Pak | D-Pak | D-Pak | D-Pak |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | 18A (Tc) | 13A (Tc) | 13A (Tc) |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 5.5V @ 250µA | 5.5V @ 250µA | 5.5V @ 250µA | 5.5V @ 250µA |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Rds On (Max) @ Id, Vgs | 165mOhm @ 10A, 10V | 125mOhm @ 11A, 10V | 235mOhm @ 8A, 10V | 235mOhm @ 8A, 10V |
Entworf fir Source Voltage (Vdss) | 200 V | 150 V | 200 V | 200 V |
Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V | 43 nC @ 10 V | 38 nC @ 10 V | 38 nC @ 10 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | - | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Power Dissipation (Max) | 3W (Ta), 140W (Tc) | - | 110W (Tc) | 110W (Tc) |
Vgs (Max) | ±30V | - | ±30V | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 910 pF @ 25 V | 900 pF @ 25 V | 830 pF @ 25 V | 830 pF @ 25 V |
Package protegéieren | Bulk | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | - | 10V | 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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