IRFPS37N50APBF Tech Spezifikatioune
Infineon Technologies - IRFPS37N50APBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFPS37N50APBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SUPER-247™ (TO-274AA) | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 130mOhm @ 22A, 10V | |
Power Dissipation (Max) | 446W (Tc) | |
Package / Case | TO-274AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 5579 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 36A (Tc) | |
Basis Produktnummer | IRFPS37 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFPS37N50APBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFPS37N50APBF | IRFPS3815PBF | IRFPS3810 | IRFPS38N60L |
Hiersteller | Infineon Technologies | International Rectifier | Infineon Technologies | Vishay Siliconix |
Package / Case | TO-274AA | TO-274AA | TO-274AA | TO-274AA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 36A (Tc) | 105A (Tc) | 170A (Tc) | 38A (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Basis Produktnummer | IRFPS37 | - | - | IRFPS38 |
Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Serie | HEXFET® | HEXFET® | HEXFET® | - |
Package protegéieren | Tube | Bulk | Bag | Tube |
Rds On (Max) @ Id, Vgs | 130mOhm @ 22A, 10V | 15mOhm @ 63A, 10V | 9mOhm @ 100A, 10V | 150mOhm @ 23A, 10V |
Supplier Device Package | SUPER-247™ (TO-274AA) | SUPER-247™ (TO-274AA) | SUPER-247™ (TO-274AA) | SUPER-247™ (TO-274AA) |
Input Capacitance (Ciss) (Max) @ Vds | 5579 pF @ 25 V | 6810 pF @ 25 V | 6790 pF @ 25 V | 7990 pF @ 25 V |
Power Dissipation (Max) | 446W (Tc) | 441W (Tc) | 580W (Tc) | 540W (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V | 390 nC @ 10 V | 390 nC @ 10 V | 320 nC @ 10 V |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Entworf fir Source Voltage (Vdss) | 500 V | 150 V | 100 V | 600 V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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