IRFP4232PBF Tech Spezifikatioune
Infineon Technologies - IRFP4232PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFP4232PBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247AC | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 35.7mOhm @ 42A, 10V | |
Power Dissipation (Max) | 430W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Bag |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -40°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 7290 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 250 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 60A (Tc) |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFP4232PBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFP4232PBF | IRFP4321PBF | IRFP4310ZPBF | IRFP4229PBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Power Dissipation (Max) | 430W (Tc) | 310W (Tc) | 280W (Tc) | 310W (Tc) |
Operatioun Temperatur | -40°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -40°C ~ 175°C (TJ) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 60A (Tc) | 78A (Tc) | 120A (Tc) | 44A (Tc) |
Rds On (Max) @ Id, Vgs | 35.7mOhm @ 42A, 10V | 15.5mOhm @ 33A, 10V | 6mOhm @ 75A, 10V | 46mOhm @ 26A, 10V |
Package protegéieren | Bag | Tube | Tube | Tube |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V | 110 nC @ 10 V | 170 nC @ 10 V | 110 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Vgs (Max) | ±20V | ±30V | ±20V | ±30V |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Input Capacitance (Ciss) (Max) @ Vds | 7290 pF @ 25 V | 4460 pF @ 25 V | 6860 pF @ 50 V | 4560 pF @ 25 V |
Supplier Device Package | TO-247AC | TO-247AC | TO-247AC | TO-247AC |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Entworf fir Source Voltage (Vdss) | 250 V | 150 V | 100 V | 250 V |
Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 4V @ 150µA | 5V @ 250µA |
Eroflueden IRFP4232PBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFP4232PBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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