IRFP3077PBF Tech Spezifikatioune
Infineon Technologies - IRFP3077PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFP3077PBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247AC | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 3.3mOhm @ 75A, 10V | |
Power Dissipation (Max) | 340W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 75 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | |
Basis Produktnummer | IRFP3077 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFP3077PBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFP3077PBF | IRFP2907PBF | IRFP31N50L | IRFP2907ZPBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Vishay Siliconix | Infineon Technologies |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Tube | Tube | Tube | Tube |
Rds On (Max) @ Id, Vgs | 3.3mOhm @ 75A, 10V | 4.5mOhm @ 125A, 10V | 180mOhm @ 19A, 10V | 4.5mOhm @ 90A, 10V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Vgs (Max) | ±20V | ±20V | ±30V | ±20V |
Basis Produktnummer | IRFP3077 | IRFP2907 | IRFP31 | IRFP2907 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | 209A (Tc) | 31A (Tc) | 90A (Tc) |
Entworf fir Source Voltage (Vdss) | 75 V | 75 V | 500 V | 75 V |
Power Dissipation (Max) | 340W (Tc) | 470W (Tc) | 460W (Tc) | 310W (Tc) |
Serie | HEXFET® | HEXFET® | - | HEXFET® |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V | 620 nC @ 10 V | 210 nC @ 10 V | 270 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 50 V | 13000 pF @ 25 V | 5000 pF @ 25 V | 7500 pF @ 25 V |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA |
Supplier Device Package | TO-247AC | TO-247AC | TO-247AC | TO-247AC |
Eroflueden IRFP3077PBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFP3077PBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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