IRFP140NPBF Tech Spezifikatioune
Infineon Technologies - IRFP140NPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFP140NPBF
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247AC | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 52mOhm @ 16A, 10V | |
Power Dissipation (Max) | 140W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 33A (Tc) | |
Basis Produktnummer | IRFP140 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFP140NPBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFP140NPBF | IRFP150MPBF | IRFP064VPBF | IRFP140PBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Vishay Siliconix |
Package protegéieren | Tube | Tube | Bag | Tube |
Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V | 1900 pF @ 25 V | 6760 pF @ 25 V | 1700 pF @ 25 V |
Basis Produktnummer | IRFP140 | IRFP150 | - | IRFP140 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Rds On (Max) @ Id, Vgs | 52mOhm @ 16A, 10V | 36mOhm @ 23A, 10V | 5.5mOhm @ 78A, 10V | 77mOhm @ 19A, 10V |
Power Dissipation (Max) | 140W (Tc) | 160W (Tc) | 250W (Tc) | 180W (Tc) |
Supplier Device Package | TO-247AC | TO-247AC | TO-247AC | TO-247AC |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V | 110 nC @ 10 V | 260 nC @ 10 V | 72 nC @ 10 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 60 V | 100 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Serie | HEXFET® | HEXFET® | HEXFET® | - |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 33A (Tc) | 42A (Tc) | 130A (Tc) | 31A (Tc) |
Eroflueden IRFP140NPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFP140NPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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