IRFP048NPBF Tech Spezifikatioune
International Rectifier - IRFP048NPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - IRFP048NPBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-247AC | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 37A, 10V | |
| Power Dissipation (Max) | 140W (Tc) | |
| Package / Case | TO-247-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 55 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 64A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier IRFP048NPBF.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | IRFP048NPBF | IRFP064 | IRFP044N | IRFP054 |
| Hiersteller | International Rectifier | Vishay Siliconix | Infineon Technologies | Vishay Siliconix |
| Entworf fir Source Voltage (Vdss) | 55 V | 60 V | 55 V | 60 V |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 37A, 10V | 9mOhm @ 78A, 10V | 20mOhm @ 29A, 10V | 14mOhm @ 54A, 10V |
| Supplier Device Package | TO-247AC | TO-247AC | TO-247AC | TO-247AC |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V | 190 nC @ 10 V | 61 nC @ 10 V | 160 nC @ 10 V |
| Package protegéieren | Bulk | Tube | Bag | Tube |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 64A (Tc) | 70A (Tc) | 53A (Tc) | 70A (Tc) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Power Dissipation (Max) | 140W (Tc) | 300W (Tc) | 120W (Tc) | 230W (Tc) |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| FET Feature | - | - | - | - |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V | 7400 pF @ 25 V | 1500 pF @ 25 V | 4500 pF @ 25 V |
| Serie | HEXFET® | - | HEXFET® | - |
IRFNL210BTAFairchild Semiconductor200V N-CHANNEL MOSFETIRFP064Vishay SiliconixMOSFET N-CH 60V 70A TO247-3IRFP064NIRIRFP044NInfineon TechnologiesMOSFET N-CH 55V 53A TO247ACIRFP048IRIRFP054Vishay SiliconixMOSFET N-CH 60V 70A TO247-3IRFP054PBFVishay SiliconixMOSFET N-CH 60V 70A TO247-3IRFP054VIRIRFNL210BTRAFairchild (onsemi)IRFP044PBFVishay SiliconixMOSFET N-CH 60V 57A TO247-3IRFP054NInfineon TechnologiesMOSFET N-CH 55V 81A TO247ACIRFP044IRIRFP048PBFVishay SiliconixMOSFET N-CH 60V 70A TO247-3IRFP048NInfineon TechnologiesMOSFET N-CH 55V 64A TO247ACIRFP054NPBFInfineon TechnologiesMOSFET N-CH 55V 81A TO247AC
IRFP044NPBFInternational RectifierHEXFET POWER MOSFETIRFP048NPBF MOSIRIRFNL210B MOSFairchild (onsemi)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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