IRFI4020H-117P Tech Spezifikatioune
Infineon Technologies - IRFI4020H-117P technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFI4020H-117P
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4.9V @ 100µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-5 Full-Pak | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 100mOhm @ 5.5A, 10V | |
Power - Max | 21W | |
Package / Case | TO-220-5 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1240pF @ 25V | |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V | |
FET Feature | - | |
Entworf fir Source Voltage (Vdss) | 200V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9.1A | |
Konfiguratioun | 2 N-Channel (Dual) | |
Basis Produktnummer | IRFI4020 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFI4020H-117P.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFI4020H-117P | IRFI4024H-117P | IRFI4019H-117P | IRFI4212H-117PXKMA1 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Package protegéieren | Tube | Tube | Tube | Tube |
Rds On (Max) @ Id, Vgs | 100mOhm @ 5.5A, 10V | 60mOhm @ 7.7A, 10V | 95mOhm @ 5.2A, 10V | 72.5mOhm @ 6.6A, 10V |
Package / Case | TO-220-5 Full Pack | TO-220-5 Full Pack | TO-220-5 Full Pack | TO-220-5 Full Pack, Formed Leads |
Basis Produktnummer | IRFI4020 | IRFI4024 | IRFI4019 | IRFI4212 |
Power - Max | 21W | 14W | 18W | 18W (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 1240pF @ 25V | 320pF @ 50V | 810pF @ 25V | 490pF @ 50V |
Entworf fir Source Voltage (Vdss) | 200V | 55V | 150V | 100V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9.1A | 11A | 8.7A | 11A (Tc) |
Supplier Device Package | TO-220-5 Full-Pak | TO-220-5 Full-Pak | TO-220-5 Full-Pak | TO-220-5 Full-Pak |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V | 13nC @ 10V | 20nC @ 10V | 18nC @ 10V |
FET Feature | - | - | - | - |
Serie | - | - | - | - |
Vgs (th) (Max) @ Id | 4.9V @ 100µA | 4V @ 25µA | 4.9V @ 50µA | 5V @ 250µA |
Eroflueden IRFI4020H-117P PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFI4020H-117P - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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