IRFHM8363TRPBF Tech Spezifikatioune
Infineon Technologies - IRFHM8363TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFHM8363TRPBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2.35V @ 25µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 14.9mOhm @ 10A, 10V | |
| Power - Max | 2.7W | |
| Package / Case | 8-PowerVDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1165pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 30V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | IRFHM8363 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFHM8363TRPBF.
| Produktiounsattriff |  |
|
|
 |
|---|---|---|---|---|
| Part Number | IRFHM8363TRPBF | IRFHM9331 | IRFHM8334 | IRFHS8242TRPBF |
| Hiersteller | Infineon Technologies | IRF | IR | Infineon Technologies |
| FET Feature | Logic Level Gate | - | - | - |
| Vgs (th) (Max) @ Id | 2.35V @ 25µA | - | - | 2.35V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V | - | - | 10.4 nC @ 10 V |
| Technologie | MOSFET (Metal Oxide) | - | - | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 30V | - | - | 25 V |
| Basis Produktnummer | IRFHM8363 | - | - | IRFHS8242 |
| Package protegéieren | Tape & Reel (TR) | - | - | Tape & Reel (TR) |
| Serie | HEXFET® | - | - | HEXFET® |
| Power - Max | 2.7W | - | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | - | -55°C ~ 150°C (TJ) |
| Input Capacitance (Ciss) (Max) @ Vds | 1165pF @ 10V | - | - | 653 pF @ 10 V |
| Rds On (Max) @ Id, Vgs | 14.9mOhm @ 10A, 10V | - | - | 13mOhm @ 8.5A, 10V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A | - | - | 9.9A (Ta), 21A (Tc) |
| Mounting Type | Surface Mount | - | - | Surface Mount |
| Konfiguratioun | 2 N-Channel (Dual) | - | - | - |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 | - | - | 6-PQFN (2x2) (DFN2020) |
| Package / Case | 8-PowerVDFN | - | - | 6-PowerVDFN |
Eroflueden IRFHM8363TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFHM8363TRPBF - Infineon Technologies.
IRFHM9331IRFIRFHM8334IRIRFHS8242TRPBFInfineon TechnologiesMOSFET N-CH 25V 9.9A/21A 6PQFNIRFHM9331TRPBF MOSIRIRFHM8342IRIRFHM8337IRIRFHM9391IRIRFHM8330TRPBFInternational RectifierMOSFET N-CH 30V 16A/55A 8PQFNIRFHM8342TRPBFInternational RectifierIRFHM8342 - 12V-300V N-CHANNEL PIRFHM9391TRPBFInfineon TechnologiesMOSFET P-CH 30V 11A 8PQFNIRFHS8242TRPBF MOSIRIRFHS8242TR2PBFInfineon TechnologiesMOSFET N-CH 25V 9.9A PQFNIRFHM8363TRPBF.IRIRFHM8363TRIRIRFHM9331TRPBFInfineon TechnologiesMOSFET P-CH 30V 11A/24A PQFNIRFHM8330IRIRFHM8337TRPBFInfineon TechnologiesMOSFET N-CH 30V 12A 8PQFNIRFHM8334TRPBFInternational RectifierMOSFET N-CH 30V 13A/43A 8PQFN DL| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? ARA AAA A WED : Mir kontaktéieren Iech direkt.