IRFH7107TRPBF Tech Spezifikatioune
Infineon Technologies - IRFH7107TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFH7107TRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 100µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-PQFN (5x6) | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 8.5mOhm @ 45A, 10V | |
Power Dissipation (Max) | 3.6W (Ta), 104W (Tc) | |
Package / Case | 8-PowerTDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 3110 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 75 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 14A (Ta), 75A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFH7107TRPBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFH7107TRPBF | IRFH7110TRPBF | IRFH7004TRPBF | IRFH7084TRPBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Rds On (Max) @ Id, Vgs | 8.5mOhm @ 45A, 10V | 13.5mOhm @ 35A, 10V | 1.4mOhm @ 100A, 10V | 1.25mOhm @ 100A, 10V |
Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V | 87 nC @ 10 V | 194 nC @ 10 V | 190 nC @ 10 V |
Serie | HEXFET® | HEXFET® | HEXFET®, StrongIRFET™ | HEXFET® |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 14A (Ta), 75A (Tc) | 11A (Ta), 58A (Tc) | 100A (Tc) | 100A (Tc) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 6V, 10V | 10V |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 75 V | 100 V | 40 V | 40 V |
Vgs (th) (Max) @ Id | 4V @ 100µA | 4V @ 100µA | 3.9V @ 150µA | 3.9V @ 150µA |
Supplier Device Package | 8-PQFN (5x6) | 8-PQFN (5x6) | 8-PQFN (5x6) | 8-PQFN (5x6) |
Power Dissipation (Max) | 3.6W (Ta), 104W (Tc) | 3.6W (Ta), 104W (Tc) | 156W (Tc) | 156W (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package / Case | 8-PowerTDFN | 8-TQFN Exposed Pad | 8-VQFN Exposed Pad | 8-PowerTDFN |
Input Capacitance (Ciss) (Max) @ Vds | 3110 pF @ 25 V | 3240 pF @ 25 V | 6419 pF @ 25 V | 6560 pF @ 25 V |
Eroflueden IRFH7107TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFH7107TRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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