IRFH5304TR2PBF Tech Spezifikatioune
Infineon Technologies - IRFH5304TR2PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFH5304TR2PBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2.35V @ 50µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-PQFN (5x6) | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 47A, 10V | |
| Package / Case | 8-PowerVDFN | |
| Package protegéieren | Cut Tape (CT) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 2360 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 22A (Ta), 79A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFH5304TR2PBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRFH5304TR2PBF | IRFH5302TRPBF | IRFH5303TRPBF | IRFH5306TRPBF |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Serie | - | HEXFET® | HEXFET® | HEXFET® |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| FET Feature | - | - | - | - |
| Package / Case | 8-PowerVDFN | 8-PowerVDFN | 8-PowerVDFN | 8-PowerVDFN |
| Package protegéieren | Cut Tape (CT) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V | 76 nC @ 10 V | 41 nC @ 10 V | 12 nC @ 4.5 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) | PQFN (5x6) Single Die | 8-PQFN (5x6) | PQFN (5x6) Single Die |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 22A (Ta), 79A (Tc) | 32A (Ta), 100A (Tc) | 23A (Ta), 82A (Tc) | 15A (Ta), 44A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 2360 pF @ 10 V | 4400 pF @ 15 V | 2190 pF @ 15 V | 1125 pF @ 15 V |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 47A, 10V | 2.1mOhm @ 50A, 10V | 4.2mOhm @ 49A, 10V | 8.1mOhm @ 15A, 10V |
| Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
| Vgs (th) (Max) @ Id | 2.35V @ 50µA | 2.35V @ 100µA | 2.35V @ 50µA | 2.35V @ 25µA |
Eroflueden IRFH5304TR2PBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFH5304TR2PBF - Infineon Technologies.
IRFH5302TRPBFInfineon TechnologiesMOSFET N-CH 30V 32A/100A PQFNIRFH5303TRPBFInfineon TechnologiesMOSFET N-CH 30V 23A/82A 8PQFNIRFH5304IRIRFH5306TRPBFInfineon TechnologiesMOSFET N-CH 30V 15A/44A PQFNIRFH5302PBFIRIRFH5306TR2PBFInfineon TechnologiesMOSFET N-CH 30V 15A 5X6 PQFNIRFH5303TR2PBFInfineon TechnologiesMOSFET N-CH 30V 23A/82A 8PQFNIRFH5302TR2PBFInfineon TechnologiesMOSFET N-CH 30V 32A 5X6 PQFNIRFH5406TRPBFInfineon TechnologiesMOSFET N-CH 60V 11A/40A 8PQFNIRFH5306IRIRFH5304TRPBFInfineon TechnologiesMOSFET N-CH 30V 22A/79A 8PQFNIRFH5302DTRPBF MOSIRIRFH5302DTRPBFInfineon TechnologiesMOSFET N-CH 30V 29A/100A PQFNIRFH5306TRPBF MOSIRIRFH6200PBFIRIRFH5306PBFIRIRFH5302TRPBF MOSCypress Semiconductor (Infineon Technologies)IRFH5406TR2PBFInfineon TechnologiesMOSFET N-CH 60V 40A 5X6 PQFN| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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