IRFH5210TR2PBF Tech Spezifikatioune
Infineon Technologies - IRFH5210TR2PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFH5210TR2PBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 100µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-PQFN (5x6) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 14.9mOhm @ 33A, 10V | |
Package / Case | 8-PowerVDFN | |
Package protegéieren | Cut Tape (CT) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2570 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Ta), 55A (Tc) |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFH5210TR2PBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFH5210TR2PBF | IRFH5206TR2PBF | IRFH5204TR2PBF | IRFH5250DTRPBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | International Rectifier |
Vgs (th) (Max) @ Id | 4V @ 100µA | 4V @ 100µA | 4V @ 100µA | 2.35V @ 150µA |
Package protegéieren | Cut Tape (CT) | Cut Tape (CT) | Cut Tape (CT) | Bulk |
Entworf fir Source Voltage (Vdss) | 100 V | 60 V | 40 V | 25 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Rds On (Max) @ Id, Vgs | 14.9mOhm @ 33A, 10V | 6.7mOhm @ 50A, 10V | 4.3mOhm @ 50A, 10V | 1.4mOhm @ 50A, 10V |
Package / Case | 8-PowerVDFN | 8-PowerVDFN | 8-VQFN Exposed Pad | 8-PowerVDFN |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V | 60 nC @ 10 V | 65 nC @ 10 V | 83 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Ta), 55A (Tc) | 16A (Ta), 89A (Tc) | 22A (Ta), 100A (Tc) | 40A (Ta), 100A (Tc) |
Serie | - | - | - | HEXFET® |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 2570 pF @ 25 V | 2490 pF @ 25 V | 2460 pF @ 25 V | 6115 pF @ 13 V |
Supplier Device Package | 8-PQFN (5x6) | 8-PQFN (5x6) | PQFN (5x6) | 8-PQFN (5x6) |
Eroflueden IRFH5210TR2PBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFH5210TR2PBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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