IRFH5007TRPBF Tech Spezifikatioune
International Rectifier - IRFH5007TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - IRFH5007TRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 150µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-PQFN (5x6) | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 5.9mOhm @ 50A, 10V | |
Power Dissipation (Max) | 3.6W (Ta), 156W (Tc) | |
Package / Case | 8-PowerTDFN | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 4290 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 75 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Ta), 100A (Tc) |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | |
Erreecht Status | |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier IRFH5007TRPBF.
Produktiounsattriff | ||||
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Part Number | IRFH5007TRPBF | IRFH5010TRPBF | IRFH5004TR2PBF | IRFH5015TRPBF |
Hiersteller | International Rectifier | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Vgs (th) (Max) @ Id | 4V @ 150µA | 4V @ 150µA | 4V @ 150µA | 5V @ 150µA |
Power Dissipation (Max) | 3.6W (Ta), 156W (Tc) | 3.6W (Ta), 250W (Tc) | - | 3.6W (Ta), 156W (Tc) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 4290 pF @ 25 V | 4340 pF @ 25 V | 4490 pF @ 20 V | 2300 pF @ 50 V |
Entworf fir Source Voltage (Vdss) | 75 V | 100 V | 40 V | 150 V |
Serie | HEXFET® | HEXFET® | - | HEXFET® |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Ta), 100A (Tc) | 13A (Ta), 100A (Tc) | 28A (Ta), 100A (Tc) | 10A (Ta), 56A (Tc) |
Package protegéieren | Bulk | Tape & Reel (TR) | Cut Tape (CT) | Tape & Reel (TR) |
Supplier Device Package | 8-PQFN (5x6) | 8-PQFN (5x6) | 8-PQFN (5x6) | 8-PQFN (5x6) |
Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V | 98 nC @ 10 V | 110 nC @ 10 V | 50 nC @ 10 V |
FET Feature | - | - | - | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (Max) | ±20V | ±20V | - | ±20V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package / Case | 8-PowerTDFN | 8-PowerVDFN | 8-PowerVDFN | 8-PowerTDFN |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs | 5.9mOhm @ 50A, 10V | 9mOhm @ 50A, 10V | 2.6mOhm @ 50A, 10V | 31mOhm @ 34A, 10V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | - | 10V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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