IRFH4213TRPBF Tech Spezifikatioune
Infineon Technologies - IRFH4213TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFH4213TRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.1V @ 100µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PQFN (5x6) | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 1.35mOhm @ 50A, 10V | |
Power Dissipation (Max) | 3.6W (Ta), 89W (Tc) | |
Package / Case | 8-PowerTDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 3420 pF @ 13 V | |
Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 25 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 41A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFH4213TRPBF.
Produktiounsattriff | ||||
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Part Number | IRFH4213TRPBF | IRFH4209DTRPBF | IRFH4210TRPBF | IRFH3707TRPBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Input Capacitance (Ciss) (Max) @ Vds | 3420 pF @ 13 V | 4620 pF @ 13 V | 4812 pF @ 13 V | 755 pF @ 15 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V | 74 nC @ 10 V | 74 nC @ 10 V | 8.1 nC @ 4.5 V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 41A (Ta) | 44A (Ta), 260A (Tc) | 45A (Ta) | 12A (Ta), 29A (Tc) |
FET Feature | - | - | - | - |
Supplier Device Package | PQFN (5x6) | PQFN (5x6) | PQFN (5x6) | 8-PQFN (3x3) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | HEXFET® | FASTIRFET™, HEXFET® | HEXFET® | HEXFET® |
Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerVDFN |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Rds On (Max) @ Id, Vgs | 1.35mOhm @ 50A, 10V | 1.1mOhm @ 50A, 10V | 1.35mOhm @ 50A, 10V | 12.4mOhm @ 12A, 10V |
Power Dissipation (Max) | 3.6W (Ta), 89W (Tc) | 3.5W (Ta), 125W (Tc) | 3.6W (Ta), 104W (Tc) | 2.8W (Ta) |
Entworf fir Source Voltage (Vdss) | 25 V | 25 V | 25 V | 30 V |
Vgs (th) (Max) @ Id | 2.1V @ 100µA | 2.1V @ 100µA | 2.1V @ 100µA | 2.35V @ 25µA |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden IRFH4213TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFH4213TRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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