IRFB7530PBF Tech Spezifikatioune
Infineon Technologies - IRFB7530PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFB7530PBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 3.7V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220AB | |
| Serie | HEXFET®, StrongIRFET™ | |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 100A, 10V | |
| Power Dissipation (Max) | 375W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 13703 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 411 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 195A (Tc) | |
| Basis Produktnummer | IRFB7530 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFB7530PBF.
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|---|---|---|---|---|
| Part Number | IRFB7530PBF | IRFB7540PBF | IRFB7534PBF | IRFB7440GPBF |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Serie | HEXFET®, StrongIRFET™ | HEXFET®, StrongIRFET™ | HEXFET®, StrongIRFET™ | HEXFET®, StrongIRFET™ |
| Input Capacitance (Ciss) (Max) @ Vds | 13703 pF @ 25 V | 4555 pF @ 25 V | 10034 pF @ 25 V | 4730 pF @ 25 V |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 100A, 10V | 5.1mOhm @ 65A, 10V | 2.4mOhm @ 100A, 10V | 2.5mOhm @ 100A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 411 nC @ 10 V | 130 nC @ 10 V | 279 nC @ 10 V | 135 nC @ 10 V |
| Power Dissipation (Max) | 375W (Tc) | 160W (Tc) | 294W (Tc) | 208W (Tc) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 60 V | 40 V |
| Supplier Device Package | TO-220AB | TO-220 | TO-220AB | TO-220AB |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V | 6V, 10V | 6V, 10V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 195A (Tc) | 110A (Tc) | 195A (Tc) | 120A (Tc) |
| Vgs (th) (Max) @ Id | 3.7V @ 250µA | 3.7V @ 100µA | 3.7V @ 250µA | 3.9V @ 100µA |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Basis Produktnummer | IRFB7530 | IRFB7540 | IRFB7534 | IRFB7440 |
| FET Feature | - | - | - | - |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Package protegéieren | Tube | Tube | Tube | Tube |
Eroflueden IRFB7530PBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFB7530PBF - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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