IRFB59N10DPBF Tech Spezifikatioune
International Rectifier - IRFB59N10DPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - IRFB59N10DPBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 5.5V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220AB | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 35.4A, 10V | |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 2450 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 59A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier IRFB59N10DPBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRFB59N10DPBF | IRFB61N15DPBF | IRFB5620PBF | IRFB52N15DPBF |
| Hiersteller | International Rectifier | International Rectifier | Infineon Technologies | Infineon Technologies |
| Supplier Device Package | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V | 140 nC @ 10 V | 38 nC @ 10 V | 89 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V | ±20V | ±30V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (th) (Max) @ Id | 5.5V @ 250µA | 5.5V @ 250µA | 5V @ 100µA | 5V @ 250µA |
| Package protegéieren | Bulk | Bulk | Tube | Tube |
| Input Capacitance (Ciss) (Max) @ Vds | 2450 pF @ 25 V | 3470 pF @ 25 V | 1710 pF @ 50 V | 2770 pF @ 25 V |
| Entworf fir Source Voltage (Vdss) | 100 V | 150 V | 200 V | 150 V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | - | 10V | 10V |
| FET Feature | - | - | - | - |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Serie | HEXFET® | HEXFET® | - | HEXFET® |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 35.4A, 10V | 32mOhm @ 36A, 10V | 72.5mOhm @ 15A, 10V | 32mOhm @ 36A, 10V |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) | 2.4W (Ta), 330W (Tc) | 144W (Tc) | 3.8W (Ta), 230W (Tc) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 59A (Tc) | 60A (Tc) | 25A (Tc) | 51A (Tc) |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
IRFB61N15DIRIRFB61N15DPBF MOSIRIRFB59N10D MOSIRIRFB61N15DPBFInternational RectifierMOSFET N-CH 150V 60A TO220ABIRFB7336PBFCypress Semiconductor (Infineon Technologies)IRFB52N15DPBIRIRFB5620PBFInfineon TechnologiesMOSFET N-CH 200V 25A TO220ABIRFB59N10DIR/VISHAYIRFB52N15DPBF.IRIRFB7347PBFCypress Semiconductor (Infineon Technologies)IRFB7374IRIRFB7347Cypress Semiconductor (Infineon Technologies)IRFB5615Cypress Semiconductor (Infineon Technologies)IRFB5620IRIRFB7336Cypress Semiconductor (Infineon Technologies)IRFB52N15DPBFInfineon TechnologiesMOSFET N-CH 150V 51A TO220ABIRFB5N50LIRIRFB5615PBFInfineon TechnologiesMOSFET N-CH 150V 35A TO220AB| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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