IRFB4710PBF Tech Spezifikatioune
Infineon Technologies - IRFB4710PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFB4710PBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 5.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220AB | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 14mOhm @ 45A, 10V | |
Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 6160 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Tc) | |
Basis Produktnummer | IRFB4710 |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFB4710PBF | IRFB5615PBF | IRFB52N15DPBF | IRFB4620PBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) | 144W (Tc) | 3.8W (Ta), 230W (Tc) | 144W (Tc) |
Entworf fir Source Voltage (Vdss) | 100 V | 150 V | 150 V | 200 V |
Rds On (Max) @ Id, Vgs | 14mOhm @ 45A, 10V | 39mOhm @ 21A, 10V | 32mOhm @ 36A, 10V | 72.5mOhm @ 15A, 10V |
Basis Produktnummer | IRFB4710 | IRFB5615 | IRFB52 | IRFB4620 |
Supplier Device Package | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 5.5V @ 250µA | 5V @ 100µA | 5V @ 250µA | 5V @ 100µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Tc) | 35A (Tc) | 51A (Tc) | 25A (Tc) |
Serie | HEXFET® | - | HEXFET® | HEXFET® |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package protegéieren | Tube | Tube | Tube | Tube |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V | 40 nC @ 10 V | 89 nC @ 10 V | 38 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 6160 pF @ 25 V | 1750 pF @ 50 V | 2770 pF @ 25 V | 1710 pF @ 50 V |
Vgs (Max) | ±20V | ±20V | ±30V | ±20V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Eroflueden IRFB4710PBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFB4710PBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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