IRFB33N15DPBF Tech Spezifikatioune
International Rectifier - IRFB33N15DPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - IRFB33N15DPBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 5.5V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220AB | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 20A, 10V | |
| Power Dissipation (Max) | 3.8W (Ta), 170W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 2020 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 150 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 33A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier IRFB33N15DPBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRFB33N15DPBF | IRFB3307PBF | IRFB3607GPBF | IRFB3507 |
| Hiersteller | International Rectifier | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V | 180 nC @ 10 V | 84 nC @ 10 V | 130 nC @ 10 V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Package protegéieren | Bulk | Tube | Tube | Tube |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 33A (Tc) | 130A (Tc) | 80A (Tc) | 97A (Tc) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Power Dissipation (Max) | 3.8W (Ta), 170W (Tc) | 200W (Tc) | 140W (Tc) | 190W (Tc) |
| Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V | ±20V | ±20V | ±20V |
| Entworf fir Source Voltage (Vdss) | 150 V | 75 V | 75 V | 75 V |
| FET Feature | - | - | - | - |
| Vgs (th) (Max) @ Id | 5.5V @ 250µA | 4V @ 150µA | 4V @ 100µA | 4V @ 100µA |
| Supplier Device Package | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 20A, 10V | 6.3mOhm @ 75A, 10V | 9mOhm @ 46A, 10V | 8.8mOhm @ 58A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2020 pF @ 25 V | 5150 pF @ 50 V | 3070 pF @ 50 V | 3540 pF @ 50 V |
IRFB3607Cypress Semiconductor (Infineon Technologies)IRFB3307PBFInfineon TechnologiesMOSFET N-CH 75V 130A TO220ABIRFB3507PBF MOSIRIRFB33N15D MOSIRIRFB3407ZIRIRFB3607GIRIRFB3415IRIRFB3307GIR/VISHAYIRFB3607GPBFInfineon TechnologiesMOSFET N-CH 75V 80A TO220ABIRFB3307ZIRIRFB3307PBF.IRIRFB3507Infineon TechnologiesMOSFET N-CH 75V 97A TO220ABIRFB3307ZPBFInfineon TechnologiesMOSFET N-CH 75V 120A TO220ABIRFB3307ZGPBFInfineon TechnologiesMOSFET N-CH 75V 120A TO220ABIRFB33N15DInfineon TechnologiesMOSFET N-CH 150V 33A TO220ABIRFB3507PBFInfineon TechnologiesMOSFET N-CH 75V 97A TO220ABIRFB3407ZPBFInfineon TechnologiesMOSFET N-CH 75V 120A TO220ABIRFB3307ZGIR| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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