IRFB3307 Tech Spezifikatioune
Infineon Technologies - IRFB3307 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFB3307
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 150µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220AB | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 75A, 10V | |
| Power Dissipation (Max) | 250W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 5150 pF @ 50 V | |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 75 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 130A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFB3307.
| Produktiounsattriff |  |
|
|
|
|---|---|---|---|---|
| Part Number | IRFB3307 | IRFB3307ZPBF | IRFB3307PBF | IRFB33N15D |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Vgs (th) (Max) @ Id | 4V @ 150µA | 4V @ 150µA | 4V @ 150µA | 5.5V @ 250µA |
| Entworf fir Source Voltage (Vdss) | 75 V | 75 V | 75 V | 150 V |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 75A, 10V | 5.8mOhm @ 75A, 10V | 6.3mOhm @ 75A, 10V | 56mOhm @ 20A, 10V |
| FET Feature | - | - | - | - |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Input Capacitance (Ciss) (Max) @ Vds | 5150 pF @ 50 V | 4750 pF @ 50 V | 5150 pF @ 50 V | 2020 pF @ 25 V |
| Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V | ±20V | ±20V | ±30V |
| Power Dissipation (Max) | 250W (Tc) | 230W (Tc) | 200W (Tc) | 3.8W (Ta), 170W (Tc) |
| Supplier Device Package | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V | 110 nC @ 10 V | 180 nC @ 10 V | 90 nC @ 10 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 130A (Tc) | 120A (Tc) | 130A (Tc) | 33A (Tc) |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Eroflueden IRFB3307 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFB3307 - Infineon Technologies.
IRFB3307ZPBFInfineon TechnologiesMOSFET N-CH 75V 120A TO220AB
IRFB3307ZIRIRFB32N20IRIRFB3306PBF MXIRIRFB3307PBFInfineon TechnologiesMOSFET N-CH 75V 130A TO220ABIRFB32N20DIRIRFB33N15D MOSIRIRFB3256IRIRFB3307PBF.IRIRFB33N15DInfineon TechnologiesMOSFET N-CH 150V 33A TO220ABIRFB3307ZGPBFInfineon TechnologiesMOSFET N-CH 75V 120A TO220ABIRFB3307ZGIRIRFB3306PBFInfineon TechnologiesMOSFET N-CH 60V 120A TO220ABIRFB3306GIRIRFB3306GPBFInfineon TechnologiesMOSFET N-CH 60V 120A TO220ABIRFB3307GIR/VISHAYIRFB3306IR
IRFB3256PBFInternational RectifierIRFB3256 - 12V-300V N-CHANNEL PO| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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