IRF9952 Tech Spezifikatioune
Infineon Technologies - IRF9952 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF9952
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SO | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V | |
Power - Max | 2W | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V | |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V | |
FET Feature | Logic Level Gate | |
Entworf fir Source Voltage (Vdss) | 30V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.5A, 2.3A | |
Konfiguratioun | N and P-Channel | |
Basis Produktnummer | IRF995 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF9952.
Produktiounsattriff | ||||
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Part Number | IRF9952 | IRF9910 | IRF9952PBF | IRF9953TR |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Konfiguratioun | N and P-Channel | 2 N-Channel (Dual) | N and P-Channel | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V | 13.4mOhm @ 10A, 10V | 100mOhm @ 2.2A, 10V | 250mOhm @ 1A, 10V |
Supplier Device Package | 8-SO | 8-SO | 8-SO | 8-SO |
Power - Max | 2W | 2W | 2W | 2W |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.5A, 2.3A | 10A, 12A | 3.5A, 2.3A | 2.3A |
Package protegéieren | Tube | Tube | Tube | Tape & Reel (TR) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 30V | 20V | 30V | 30V |
Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V | 900pF @ 10V | 190pF @ 15V | 190pF @ 15V |
Basis Produktnummer | IRF995 | IRF99 | IRF995 | IRF995 |
Vgs (th) (Max) @ Id | 1V @ 250µA | 2.55V @ 250µA | 1V @ 250µA | 1V @ 250µA |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V | 11nC @ 4.5V | 14nC @ 10V | 12nC @ 10V |
Eroflueden IRF9952 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF9952 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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