IRF8113 Tech Spezifikatioune
Infineon Technologies - IRF8113 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF8113
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.2V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SO | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 5.6mOhm @ 17.2A, 10V | |
Power Dissipation (Max) | 2.5W (Ta) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2910 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17.2A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF8113.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRF8113 | IRF8010STRLPBF | IRF8113GPBF | IRF8113GTRPBF |
Hiersteller | Infineon Technologies | Infineon Technologies | International Rectifier | Infineon Technologies |
Input Capacitance (Ciss) (Max) @ Vds | 2910 pF @ 15 V | 3830 pF @ 25 V | 2910 pF @ 15 V | 2910 pF @ 15 V |
Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 4.5 V | 120 nC @ 10 V | 36 nC @ 4.5 V | 36 nC @ 4.5 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Package protegéieren | Tube | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 5.6mOhm @ 17.2A, 10V | 15mOhm @ 45A, 10V | 5.6mOhm @ 17.2A, 10V | 5.6mOhm @ 17.2A, 10V |
Power Dissipation (Max) | 2.5W (Ta) | 260W (Tc) | 2.5W (Ta) | 2.5W (Ta) |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 30 V | 100 V | 30 V | 30 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17.2A (Ta) | 80A (Tc) | 17.2A (Ta) | 17.2A (Ta) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 4.5V, 10V | 4.5V, 10V |
Supplier Device Package | 8-SO | D2PAK | 8-SO | 8-SO |
Vgs (th) (Max) @ Id | 2.2V @ 250µA | 4V @ 250µA | 2.2V @ 250µA | 2.2V @ 250µA |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden IRF8113 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF8113 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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