IRF8010SPBF Tech Spezifikatioune
Infineon Technologies - IRF8010SPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF8010SPBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | D2PAK | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 45A, 10V | |
| Power Dissipation (Max) | 260W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 3830 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF8010SPBF.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | IRF8010SPBF | IRF7946TRPBF | IRF8010PBF | IRF8010STRLPBF |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Supplier Device Package | D2PAK | DIRECTFET™ MX | TO-220AB | D2PAK |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 6V, 10V | 10V | 10V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | 90A (Tc) | 80A (Tc) | 80A (Tc) |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 3.9V @ 150µA | 4V @ 250µA | 4V @ 250µA |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Entworf fir Source Voltage (Vdss) | 100 V | 40 V | 100 V | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V | 212 nC @ 10 V | 120 nC @ 10 V | 120 nC @ 10 V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Serie | HEXFET® | HEXFET®, StrongIRFET™ | HEXFET® | HEXFET® |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 45A, 10V | 1.4mOhm @ 90A, 10V | 15mOhm @ 45A, 10V | 15mOhm @ 45A, 10V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Input Capacitance (Ciss) (Max) @ Vds | 3830 pF @ 25 V | 6852 pF @ 25 V | 3830 pF @ 25 V | 3830 pF @ 25 V |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | DirectFET™ Isometric MX | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| FET Feature | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Through Hole | Surface Mount |
| Package protegéieren | Tube | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
| Power Dissipation (Max) | 260W (Tc) | 96W (Tc) | 260W (Tc) | 260W (Tc) |
Eroflueden IRF8010SPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF8010SPBF - Infineon Technologies.
IRF7946TRPBFInfineon TechnologiesMOSFET N-CH 40V 90A DIRECTFET MX
IRF7923IRIRF80702TRPBF.IRIRF807VD2TRPBFIRIRF807VD1IRIRF8010PBFInfineon TechnologiesMOSFET N-CH 100V 80A TO220ABIRF7N1405SCVIRIRF80701IRIRF8010 MOSIRIRF8010SIRIRF7910TRPBF.IRIRF807VD1TRPBFIRIRF8010STRPBFIRIRF7NA2907SCVIRIRF8010STRLPBFInfineon TechnologiesMOSFET N-CH 100V 80A D2PAKIRF807D1IRIRF80702TRPBFIRIRF8010IR| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.