IRF7807D1 Tech Spezifikatioune
Infineon Technologies - IRF7807D1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF7807D1
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Vgs (Max) | ±12V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SO | |
Serie | FETKY™ | |
Rds On (Max) @ Id, Vgs | 25mOhm @ 7A, 4.5V | |
Power Dissipation (Max) | 2.5W (Tc) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Tube | |
Mounting Type | Surface Mount | |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | Schottky Diode (Isolated) | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.3A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF7807D1.
Produktiounsattriff | ||||
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Part Number | IRF7807D1 | IRF7807D1TR | IRF7807D2TRPBF | IRF7805ZTRPBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Rds On (Max) @ Id, Vgs | 25mOhm @ 7A, 4.5V | 25mOhm @ 7A, 4.5V | 25mOhm @ 7A, 4.5V | 6.8mOhm @ 16A, 10V |
Power Dissipation (Max) | 2.5W (Tc) | 2.5W (Ta) | 2.5W (Ta) | 2.5W (Ta) |
FET Feature | Schottky Diode (Isolated) | Schottky Diode (Isolated) | Schottky Diode (Isolated) | - |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V | 4.5V | 4.5V | 4.5V, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | FETKY™ | FETKY™ | FETKY™ | HEXFET® |
Vgs (th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA | 2.25V @ 250µA |
Supplier Device Package | 8-SO | 8-SO | 8-SO | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V | 17 nC @ 5 V | 17 nC @ 5 V | 27 nC @ 4.5 V |
Vgs (Max) | ±12V | ±12V | ±12V | ±20V |
Package protegéieren | Tube | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.3A (Ta) | 8.3A (Ta) | 8.3A (Ta) | 16A (Ta) |
Eroflueden IRF7807D1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF7807D1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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