IRF7663 Tech Spezifikatioune
Infineon Technologies - IRF7663 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF7663
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 1.2V @ 250µA | |
| Vgs (Max) | ±12V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | Micro8™ | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 7A, 4.5V | |
| Power Dissipation (Max) | 1.8W (Ta) | |
| Package / Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 2520 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 5 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.2A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF7663.
| Produktiounsattriff |  |
|
 |
 |
|---|---|---|---|---|
| Part Number | IRF7663 | IRF7663TR | IRF7702TR | IRF7665S2TRPBF |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | International Rectifier |
| Input Capacitance (Ciss) (Max) @ Vds | 2520 pF @ 10 V | 2520 pF @ 10 V | 3470 pF @ 10 V | 515 pF @ 25 V |
| Vgs (th) (Max) @ Id | 1.2V @ 250µA | 1.2V @ 250µA | 1.2V @ 250µA | 5V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 5 V | 45 nC @ 5 V | 81 nC @ 4.5 V | 13 nC @ 10 V |
| Package / Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-TSSOP (0.173", 4.40mm Width) | DirectFET™ Isometric SB |
| FET Feature | - | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.2A (Ta) | 8.2A (Ta) | 8A (Tc) | 4.1A (Ta), 14.4A (Tc) |
| Vgs (Max) | ±12V | - | ±8V | ±20V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | - | 1.8V, 4.5V | - |
| Serie | HEXFET® | - | HEXFET® | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package protegéieren | Tube | Cut Tape (CT) | Tape & Reel (TR) | Bulk |
| Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 12 V | 100 V |
| Power Dissipation (Max) | 1.8W (Ta) | - | 1.5W (Tc) | 2.4W (Ta), 30W (Tc) |
| Supplier Device Package | Micro8™ | Micro8™ | 8-TSSOP | DirectFET™ Isometric SB |
| FET Typ | P-Channel | P-Channel | P-Channel | N-Channel |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 7A, 4.5V | 20mOhm @ 7A, 4.5V | 14mOhm @ 8A, 4.5V | 62mOhm @ 8.9A, 10V |
Eroflueden IRF7663 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF7663 - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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