IRF7524D1PBF Tech Spezifikatioune
Infineon Technologies - IRF7524D1PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF7524D1PBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 700mV @ 250µA (Min) | |
| Vgs (Max) | ±12V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | Micro8™ | |
| Serie | FETKY™ | |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 1.2A, 4.5V | |
| Power Dissipation (Max) | 1.25W (Ta) | |
| Package / Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 4.5 V | |
| FET Typ | P-Channel | |
| FET Feature | Schottky Diode (Isolated) | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.7V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.7A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF7524D1PBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRF7524D1PBF | IRF7526D1TR | IRF7524D1TR | IRF7524D1GTRPBF |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fuert Volt (Max Rds On, Min Rds On) | 2.7V, 4.5V | 4.5V, 10V | 2.7V, 4.5V | 2.7V, 4.5V |
| Vgs (Max) | ±12V | ±20V | ±12V | ±12V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 15 V | 180 pF @ 25 V | 240 pF @ 15 V | 240 pF @ 15 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.7A (Ta) | 2A (Ta) | 1.7A (Ta) | 1.7A (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 4.5 V | 11 nC @ 10 V | 8.2 nC @ 4.5 V | 8.2 nC @ 4.5 V |
| FET Feature | Schottky Diode (Isolated) | Schottky Diode (Isolated) | Schottky Diode (Isolated) | Schottky Diode (Isolated) |
| FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
| Package / Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| Vgs (th) (Max) @ Id | 700mV @ 250µA (Min) | 1V @ 250µA | 700mV @ 250µA (Min) | 700mV @ 250µA (Min) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Power Dissipation (Max) | 1.25W (Ta) | 1.25W (Ta) | 1.25W (Ta) | 1.25W (Ta) |
| Package protegéieren | Tube | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Entworf fir Source Voltage (Vdss) | 20 V | 30 V | 20 V | 20 V |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 1.2A, 4.5V | 200mOhm @ 1.2A, 10V | 270mOhm @ 1.2A, 4.5V | 270mOhm @ 1.2A, 4.5V |
| Supplier Device Package | Micro8™ | Micro8™ | Micro8™ | 8-uSMD |
| Serie | FETKY™ | FETKY™ | FETKY™ | FETKY™ |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden IRF7524D1PBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF7524D1PBF - Infineon Technologies.
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IRF7530TRInfineon TechnologiesMOSFET 2N-CH 20V 5.4A MICRO8IRF7521DTRPBFIR| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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