IRF7343PBF Tech Spezifikatioune
Infineon Technologies - IRF7343PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF7343PBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 1V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SO | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.7A, 10V | |
| Power - Max | 2W | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 55V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.7A, 3.4A | |
| Konfiguratioun | N and P-Channel | |
| Basis Produktnummer | IRF734 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF7343PBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRF7343PBF | IRF7342TRPBF | IRF7343TRPBF | IRF7342QTRPBF |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package protegéieren | Tube | Tape & Reel (TR) | Tape & Reel (TR) | Cut Tape (CT) |
| Serie | HEXFET® | HEXFET® | HEXFET® | - |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.7A, 10V | 105mOhm @ 3.4A, 10V | 50mOhm @ 4.7A, 10V | 105mOhm @ 3.4A, 10V |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Power - Max | 2W | 2W | 2W | 2W |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V | 38nC @ 10V | 36nC @ 10V | 38nC @ 10V |
| Basis Produktnummer | IRF734 | IRF734 | IRF734 | IRF734 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Feature | - | Logic Level Gate | - | Logic Level Gate |
| Konfiguratioun | N and P-Channel | 2 P-Channel (Dual) | N and P-Channel | 2 P-Channel (Dual) |
| Supplier Device Package | 8-SO | 8-SO | 8-SO | 8-SO |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
| Vgs (th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.7A, 3.4A | 3.4A | 4.7A, 3.4A | 3.4A |
| Entworf fir Source Voltage (Vdss) | 55V | 55V | 55V | 55V |
| Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 25V | 690pF @ 25V | 740pF @ 25V | 690pF @ 25V |
Eroflueden IRF7343PBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF7343PBF - Infineon Technologies.
IRF7343TRPBF MOSCypress Semiconductor (Infineon Technologies)
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IRF734PBFVishay SiliconixMOSFET N-CH 450V 4.9A TO220ABIRF7342QTRPBF.IRIRF7345TRPBFIR| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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