IRF7338PBF Tech Spezifikatioune
Infineon Technologies - IRF7338PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF7338PBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SO | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 6A, 4.5V | |
| Power - Max | 2W | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 9V | |
| Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 4.5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 12V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.3A, 3A | |
| Konfiguratioun | N and P-Channel | |
| Basis Produktnummer | IRF733 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF7338PBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRF7338PBF | IRF7341GTRPBF | IRF7338TRPBF | IRF7335D1TR |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Serie | HEXFET® | HEXFET® | HEXFET® | FETKY™ |
| FET Feature | Logic Level Gate | - | Logic Level Gate | Logic Level Gate |
| Power - Max | 2W | 2.4W | 2W | 2W |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 9V | 780pF @ 25V | 640pF @ 9V | 1500pF @ 15V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | 1V @ 250µA (Min) | 1.5V @ 250µA | 1V @ 250µA |
| Basis Produktnummer | IRF733 | IRF734 | IRF733 | IRF733 |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 14-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.3A, 3A | 5.1A | 6.3A, 3A | 10A |
| Supplier Device Package | 8-SO | 8-SO | 8-SO | 14-SOIC |
| Package protegéieren | Tube | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 4.5V | 44nC @ 10V | 8.6nC @ 4.5V | 20nC @ 4.5V |
| Entworf fir Source Voltage (Vdss) | 12V | 55V | 12V | 30V |
| Konfiguratioun | N and P-Channel | 2 N-Channel (Dual) | N and P-Channel | 2 N-Channel (Dual) Asymmetrical |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 6A, 4.5V | 50mOhm @ 5.1A, 10V | 34mOhm @ 6A, 4.5V | 17.5mOhm @ 10A, 4.5V |
Eroflueden IRF7338PBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF7338PBF - Infineon Technologies.
IRF7341 MOSIRIRF7335D1IRIRF7341GTRPBFInfineon TechnologiesMOSFET N-CH 55V 5.1AIRF7336D1IRIRF7335D1TRPBFIR
IRF734Vishay SiliconixMOSFET N-CH 450V 4.9A TO220ABIRF7338TRPBFInfineon TechnologiesMOSFET N/P-CH 12V 6.3A 8-SOICIRF7336D1TRIRIRF7338IRIRF7341ITRPBFIRIRF7341IRIRF7335D1TRPBF.IRIRF7339D1TRIRIRF7338TRIRIRF7338TRPBF MOSIRFIRF7335IRIRF7335D1TRInfineon TechnologiesMOSFET 2N-CH 30V 10A 14-SOICIRF7335D1PBFIR| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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