IRF7326D2TRPBF Tech Spezifikatioune
Infineon Technologies - IRF7326D2TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF7326D2TRPBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 1V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SO | |
| Serie | FETKY™ | |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1.8A, 10V | |
| Power Dissipation (Max) | 2W (Ta) | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | Schottky Diode (Isolated) | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.6A (Ta) |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF7326D2TRPBF.
| Produktiounsattriff |  |
|
|
 |
|---|---|---|---|---|
| Part Number | IRF7326D2TRPBF | IRF7326D2TR | IRF7324PBF | IRF7328 MOS |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | IR |
| Vgs (th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA | - |
| FET Feature | Schottky Diode (Isolated) | Schottky Diode (Isolated) | Logic Level Gate | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| FET Typ | P-Channel | P-Channel | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.6A (Ta) | 3.6A (Ta) | 9A | - |
| Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 20V | - |
| Vgs (Max) | ±20V | ±20V | - | - |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1.8A, 10V | 100mOhm @ 1.8A, 10V | 18mOhm @ 9A, 4.5V | - |
| Serie | FETKY™ | FETKY™ | HEXFET® | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | 25 nC @ 10 V | 63nC @ 5V | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tube | - |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V | 440 pF @ 25 V | 2940pF @ 15V | - |
| Supplier Device Package | 8-SO | 8-SO | 8-SO | - |
| Power Dissipation (Max) | 2W (Ta) | 2W (Ta) | - | - |
Eroflueden IRF7326D2TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF7326D2TRPBF - Infineon Technologies.
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IRF7328TRPBF +++++Cypress Semiconductor (Infineon Technologies)IRF7326D2TRPBF MOSIRIRF7326D2 MOSIRIRF7328TRPBFInfineon TechnologiesMOSFET 2P-CH 30V 8A 8-SOICIRF7328TRPBF MOSCypress Semiconductor (Infineon Technologies)IRF7328IRIRF7326D2TR MOSIRFIRF7325Infineon TechnologiesMOSFET 2P-CH 12V 7.8A 8-SOIC| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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